The 1200-V SiC VJFET was connected in the cascode configuration with two Si MOSFETs and with a low-voltage SiC VJFET to form normally-off power switches. At a forward drain voltage drop of 2.2V, the SiC/MOSFETs cascode switch outputs 33 A. The all-SiC cascode switch outputs 24 A at a voltage drop of 4.7 V.
INTRODUCTIONWideband gap semiconductors like silicon carbide (SiC) and the III-IV nitrides are currently being developed for high-power/temperature applications. Silicon carbide (SiC)is ideally suited for power-conditioning applications due to its high saturated drift velocity, its mechanical strength, its excellent thermal conductivity, and its high critical field strength. For power devices, the tenfold increase in critical field strength of SiC relative to Si allows high-voltage blocking layers to be fabricated significantly thinner than those of comparable Si devices. This reduces device onstate resistance, and the associated conduction and switching losses, while maintaining the same high-voltage blocking capability. Figure 1 shows the theoretical specific onstate resistance of blocking regions designed for certain breakdown voltages in Si and 4H-SiC, under optimum punchthrough conditions [1].
The specific onstate resistance of 4H-SiC is approximately 400 times lower than that of Si at a given breakdown voltage. This allows for high current operation at relatively low-forward voltage drop. In addition, the wide band gap of SiC allows operation at high temperatures where conventional Si devices fail. Forward voltage drop versus current density of Northrop Grumman’s all-SiC vertical junction field effect transistor- (VJFET-) based cascode switch, and those of commercial Si MOSFET, Si IGBT, and Si CoolMOS switches are shown in Figure 2. The SiC switch has a lower voltage drop at a given current density, even at the elevated temperature of 150◦C. The low-loss and the high-temperature operational capabilities of SiC devices can potentially eliminate the costly cooling systems present in today’s Si based power electronics. Presently, several SiC devices are being developed for 600 V (1200V rating) power switching applications.
SiC MOS-based devices show promise as normally-off power switches but suffer from low-MOS mobility and native oxide issues that limit reliable operation to below 175◦C [2]. Furthermore, several temperature-dependant factors result in a decrease of the SiC MOSFET threshold voltage with temperature. This may lead to unwanted MOSFET turnon at temperatures over 200◦C. The SiC bipolar junction transistor is another normallyoff power switching candidate. However, as with all SiC bipolar devices, its long term performance deteriorates due to forward bias voltage degradation [3]. Also, the BJT is a current controlled device that can require substantial base drive current [4].
The SiC VJFET is a very promising candidate for highpower/temperature switching as it only uses pn junctions in the active device area, where the high-electric fields
occur, and can therefore fully exploit the high-temperature properties of SiC in a gate voltage controlled switching device. VJFETs for high voltage applications are typically normally-on devices, and an all-SiC normally-off power switch can be implemented by combining a high-voltage normally-on VJFET with a low-voltage normally-off VJFET in the cascode configuration.
In this paper, we review the reliability and high temperature characteristics of 1.25 × 10−3 cm2 area unipolar ionimplanted SiC VJFETs. Subsequently, we present the forward current and locking voltage characteristics of 0.19 cm2 area 1200 V normally-on and 0.15 cm2 area low-voltage normally-off SiC VJFETs. The 0.19 cm2 1200-V VJFETs have been connected in the cascode configuration with SiMOSFETs and 0.15 cm2 low-voltage SiC VJFETs to form
normally-off power switches.
CONCLUSIONThe SiC VJFET is a very promising candidate for reliable high-power/temperature switching as it only uses pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltagedegradation, and exhibit holdoff times higher than those
of their Si counterparts in short circuit testing. The VJFET based all-SiC normally-off cascode switch’s internal diode has exhibited a very fast 100 nanoseconds reverse recovery time, eliminating the need for antiparallel diodes in power switching circuits. VJFETs were successfully operated at 300◦C junction temperature. The measured reduction in onstate current is in good agreement with the theoretical reduction in SiC electron mobility.
To meet the current handling requirements of modern power conditioning systems, 1200 V normally-on VJFETs of 0.19 cm2 and low-voltage normally-off VJFETs of 0.15 cm2 areas were fabricated. At a gate bias of 2.5V, the 1200-V VJFET outputs 53 A with a forward drain voltage drop of 2V and a specific onstate resistance of 5.4mΩcm2. The lowvoltage VJFET’s drain current is 28 A, at a gate bias of 2.5V, with a forward drain voltage drop of 3.3V and a specific onstate resistance of 15mΩcm2.
A 1200-V SiC VJFET was connected in the cascode configuration with two commercial Si MOSFETs to form a normally-off power switch. At aMOSFET gate-to-source bias of 15V, the cascode switch outputs 33 A at a forward drain voltage drop of 2.2V. To fully exploit the high-temperature capability of SiC in a normally-off power switch, a 0.15 cm2 low-voltage normally-off SiC VJFET was connected with a 0.19cm2 1200-V normally-on VJFET in the cascode configuration. At a forward drain voltage drop of 4.7V, the all-SiC cascode switch outputs 24 A at 2.5V cascode gate bias. Operating the 1200 V normally-on SiC VJFET as a switch in an inherently safe gate-drive circuit eliminates the need for a low-voltage normally-off SiC VJFET cascode component, and enables high-current/high-gain operation with low voltage drop and low onstate resistance.
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